California Eastern Laboratories - CEL Bipolar RF Transistors UPA812T-A

Dual NPN silicon bipolar transistor for RF applications in a surface-mount SOT-363 package. It features a gain of 16 dB, a noise figure of 1.4 dB, a frequency response up to 1.0 GHz, and operates at a collector-emitter voltage of 3 V with a collector current of 7 mA. The device includes two matched transistors in one package, each with a maximum power dissipation of 200 mW.