California Eastern Laboratories - CEL Bipolar RF Transistors UPA811T-A

Description
RF TRANS 2 NPN 10V 8GHZ SOT363
Description
RF TRANS 2 NPN 10V 8GHZ SOT363
Datasheet
Datasheet Summary
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The UPA811T-A is a twin NPN silicon bipolar transistor in an SOT-363 package, designed for RF amplification. It features a transition frequency of 2.0 GHz, a collector-emitter voltage of 10 V, and operates with a collector current of 5 mA. Each integrated transistor provides a current gain (hFE) of 120, a noise figure of 1.9 dB, and a gain of 9.0 dB at 3 V and 5 mA. The device includes two matching transistors in a single surface-mount package for balanced amplifier applications.

Datasheet Summary
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The UPA811T-A is a twin NPN silicon bipolar transistor in an SOT-363 package, designed for RF amplification. It features a transition frequency of 2.0 GHz, a collector-emitter voltage of 10 V, and operates with a collector current of 5 mA. Each integrated transistor provides a current gain (hFE) of 120, a noise figure of 1.9 dB, and a gain of 9.0 dB at 3 V and 5 mA. The device includes two matching transistors in a single surface-mount package for balanced amplifier applications.

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - UPA811T-A - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
UPA811T-A
Bipolar RF Transistors UPA811T-A
RF TRANS 2 NPN 10V 8GHZ SOT363

RF TRANS 2 NPN 10V 8GHZ SOT363

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number UPA811T-A
Product Name Bipolar RF Transistors
Polarity 2 NPN (Dual); NPN
Package Type 6-TSSOP, SC-88, SOT-363
IC(max) 35 milliamps
VCEO 10 volts
Power Gain 7.5 dB
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