California Eastern Laboratories - CEL Bipolar RF Transistors UPA810T-T1

Description
RF Transistor 2 NPN (Dual) 12V 100mA 4.5GHz 200mW Surface Mount 6-SO
Request a Quote Datasheet
Description
RF Transistor 2 NPN (Dual) 12V 100mA 4.5GHz 200mW Surface Mount 6-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - UPA810TTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
UPA810TTR-ND
Bipolar RF Transistors UPA810TTR-ND
RF Transistor 2 NPN (Dual) 12V 100mA 4.5GHz 200mW Surface Mount 6-SO

RF Transistor 2 NPN (Dual) 12V 100mA 4.5GHz 200mW Surface Mount 6-SO

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - UPA810T-T1 - 052964-UPA810T-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - UPA810T-T1
052964-UPA810T-T1
TRANSISTORS - RF Transistors (BJT) - UPA810T-T1 052964-UPA810T-T1
Manufacturer: CEL Win Source Part Number: 052964-UPA810T-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 9dB Frequency - Transition: 4.5GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.2dB to 2.5dB @ 1GHz Family Name: UPA810T Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 6-SO Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Alternative Parts (Cross-Reference): UPA810T-T1-A; UPA810T-A; Upa810t; Introduction Date: November 20, 1997 ECCN: EAR99 Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: CEL
Win Source Part Number: 052964-UPA810T-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 7dB to 9dB
Frequency - Transition: 4.5GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1.2dB to 2.5dB @ 1GHz
Family Name: UPA810T
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-SO
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 7mA, 3V
Maximum Power Dissipation: 200mW
Alternative Parts (Cross-Reference): UPA810T-T1-A; UPA810T-A; Upa810t;
Introduction Date: November 20, 1997
ECCN: EAR99
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
12V 4.5GHZ Bipolar Transistor
283-UPA810T-T1
12V 4.5GHZ Bipolar Transistor 283-UPA810T-T1
RF TRANS 2 NPN 12V 4.5GHZ 6SO Product overview: UPA810T-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.5GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 4.5GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-UPA810T-T1 can be used for catalog matching and distributor lookup.

RF TRANS 2 NPN 12V 4.5GHZ 6SO Product overview: UPA810T-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.5GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 4.5GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-UPA810T-T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - UPA810T-T1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
UPA810T-T1
Bipolar RF Transistors UPA810T-T1
RF TRANS 2 NPN 12V 4.5GHZ 6SO

RF TRANS 2 NPN 12V 4.5GHZ 6SO

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number UPA810TTR-ND 052964-UPA810T-T1 283-UPA810T-T1 UPA810T-T1
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - UPA810T-T1 12V 4.5GHZ Bipolar Transistor Bipolar RF Transistors
Polarity NPN 2 NPN (Dual); NPN 2 NPN (Dual); NPN
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; 6-SO Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363
Packing Method Tape Reel; Reel - TR Tape & Reel (TR)
IC(max) 100 milliamps 100 milliamps
VCEO 12 volts 12 volts 12 volts
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