California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - UPA810T-T1-A UPA810T-T1-A

Description
Manufacturer: CEL Win Source Part Number: 102152-UPA810T-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 4.5GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 102152-UPA810T-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 4.5GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - UPA810T-T1-A - 102152-UPA810T-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - UPA810T-T1-A
102152-UPA810T-T1-A
TRANSISTORS - RF Transistors (BJT) - UPA810T-T1-A 102152-UPA810T-T1-A
Manufacturer: CEL Win Source Part Number: 102152-UPA810T-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 4.5GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 102152-UPA810T-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 4.5GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 7mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - UPA810T-ATR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
UPA810T-ATR-ND
Bipolar RF Transistors UPA810T-ATR-ND
RF Transistor 2 NPN (Dual) 12V 100mA 4.5GHz 200mW Surface Mount SOT-363

RF Transistor 2 NPN (Dual) 12V 100mA 4.5GHz 200mW Surface Mount SOT-363

Buy Now Datasheet
RF DUAL TRANSISTORS NPN SOT-363 - 130-UPA810T-T1-A - Utmel Electronic Limited
Hong Kong, China
RF DUAL TRANSISTORS NPN SOT-363
130-UPA810T-T1-A
RF DUAL TRANSISTORS NPN SOT-363 130-UPA810T-T1-A
RF DUAL TRANSISTORS NPN SOT-363

RF DUAL TRANSISTORS NPN SOT-363

Supplier's Site
Bipolar RF Transistors - UPA810T-T1-A - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
UPA810T-T1-A
Bipolar RF Transistors UPA810T-T1-A
RF TRANS 2 NPN 12V 4.5GHZ SOT363

RF TRANS 2 NPN 12V 4.5GHZ SOT363

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited ODG (Origin Data Global)
Product Category RF Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number 102152-UPA810T-T1-A UPA810T-ATR-ND 130-UPA810T-T1-A UPA810T-T1-A
Product Name TRANSISTORS - RF Transistors (BJT) - UPA810T-T1-A Bipolar RF Transistors RF DUAL TRANSISTORS NPN SOT-363 Bipolar RF Transistors
Polarity NPN; 2 NPN (Dual) NPN NPN 2 NPN (Dual); NPN
Package Type SOT3; SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Packing Method Tape Reel; Reel - TR Tape Reel; Cut Tape (CT)
TJ 150 C (302 F) 150 C (302 F)
Power Gain 70 dB 9 dB 9 dB
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