California Eastern Laboratories - CEL Bipolar RF Transistors UPA810T-A

The UPA810T-A is a dual NPN silicon RF transistor in a surface-mount SOT-363 package measuring 2 mm × 1.25 mm, designed for low-noise amplification in handheld wireless applications. Each transistor features a collector current rating of 100 mA, a collector-emitter voltage of 12 V, and a total power dissipation of 200 mW for both devices. It operates with a typical noise figure of 1.2 dB and a gain bandwidth of 4.5 GHz at 1 GHz, with insertion power gain of 9 dB. The device meets RoHS requirements and is packaged in an embossed tape for surface mount assembly.