California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - UPA806T-T1 UPA806T-T1

Manufacturer: CEL
Win Source Part Number: 1116523-UPA806T-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 12GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz
Family Name: uPA806T
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-SO
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
Typical Gain (hFE) (Min): 75 @ 10mA, 3V
Maximum Power Dissipation: 200mW
Alternative Parts (Cross-Reference): uPA836TF; AT-32063-TR2G; uPA833TF-T1; AT-32063;
Introduction Date: November 11, 1997
ECCN: EAR99
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

RF TRANS 2 NPN 6V 12GHZ 6SO Product overview: UPA806T-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6V, 12GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 6V, 12GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-UPA806T-T1 can be used for catalog matching and distributor lookup.

RF Transistor 2 NPN (Dual) 6V 30mA 12GHz 200mW Surface Mount 6-SO