California Eastern Laboratories - CEL Bipolar RF Transistors UPA806T-A

Dual NPN bipolar transistor for RF applications, packaged in SOT-363. Each transistor has a transition frequency of 2.0 GHz, a collector-emitter voltage rating of 3 V, and a collector current of 3 mA. The device exhibits a noise figure of 1.5 dB and a gain of 7.5 dB at 3 V, 3 mA, and operates with a maximum power dissipation of 200 mW.