California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - UPA802T-T1-A UPA802T-T1-A

Description
Manufacturer: CEL Win Source Part Number: 109317-UPA802T-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 7GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 109317-UPA802T-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 7GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - UPA802T-T1-A - 109317-UPA802T-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - UPA802T-T1-A
109317-UPA802T-T1-A
TRANSISTORS - RF Transistors (BJT) - UPA802T-T1-A 109317-UPA802T-T1-A
Manufacturer: CEL Win Source Part Number: 109317-UPA802T-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 7GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 109317-UPA802T-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB
Frequency - Transition: 7GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-363
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 70 @ 7mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - UPA802T-T1-A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
UPA802T-T1-A-ND
Bipolar RF Transistors UPA802T-T1-A-ND
RF Transistor 2 NPN (Dual) 10V 65mA 7GHz 200mW Surface Mount SOT-363

RF Transistor 2 NPN (Dual) 10V 65mA 7GHz 200mW Surface Mount SOT-363

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category RF Transistors Transistors
Product Number 109317-UPA802T-T1-A UPA802T-T1-A-ND
Product Name TRANSISTORS - RF Transistors (BJT) - UPA802T-T1-A Bipolar RF Transistors
Polarity NPN; 2 NPN (Dual) NPN
Package Type SOT3; SOT-363 6-TSSOP, SC-88, SOT-363
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
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