NEC Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NP82N055NUG-S18-AY

Description
Win Source Part Number: 1082629-NP82N055NUG- S18-AY Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V Temperature Range - Operating: 175°C (TJ) Alternative Parts (Cross-Reference): IPI80N06S3-07; 2SK4066-1E; STB80NF55-06-1; IPI80N06S207AKSA2; IPI80N06S3L-05; HUF75333S3; ECCN: EAR99 Fake Threat In the Open Market: 58 pct. HTSUS: 8541.29.0095 Mfr: NEC Corporation Other Names: 2156-NP82N055NUG-S18 -AY-NEC,RENNECNP82N0 55NUG-S18-AY Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1082629-NP82N055NUG-S18-AY - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP82N055NUG-S18-AY - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Win Source Part Number: 1082629-NP82N055NUG- S18-AY Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V Temperature Range - Operating: 175°C (TJ) Alternative Parts (Cross-Reference): IPI80N06S3-07; 2SK4066-1E; STB80NF55-06-1; IPI80N06S207AKSA2; IPI80N06S3L-05; HUF75333S3; ECCN: EAR99 Fake Threat In the Open Market: 58 pct. HTSUS: 8541.29.0095 Mfr: NEC Corporation Other Names: 2156-NP82N055NUG-S18 -AY-NEC,RENNECNP82N0 55NUG-S18-AY Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1082629-NP82N055NUG-S18-AY - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1082629-NP82N055NUG-S18-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1082629-NP82N055NUG-S18-AY
Win Source Part Number: 1082629-NP82N055NUG- S18-AY Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V Temperature Range - Operating: 175°C (TJ) Alternative Parts (Cross-Reference): IPI80N06S3-07; 2SK4066-1E; STB80NF55-06-1; IPI80N06S207AKSA2; IPI80N06S3L-05; HUF75333S3; ECCN: EAR99 Fake Threat In the Open Market: 58 pct. HTSUS: 8541.29.0095 Mfr: NEC Corporation Other Names: 2156-NP82N055NUG-S18 -AY-NEC,RENNECNP82N0 55NUG-S18-AY Product Status: Obsolete

Win Source Part Number: 1082629-NP82N055NUG-S18-AY
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Temperature Range - Operating: 175°C (TJ)
Alternative Parts (Cross-Reference): IPI80N06S3-07; 2SK4066-1E; STB80NF55-06-1; IPI80N06S207AKSA2; IPI80N06S3L-05; HUF75333S3;
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
HTSUS: 8541.29.0095
Mfr: NEC Corporation
Other Names: 2156-NP82N055NUG-S18-AY-NEC,RENNECNP82N055NUG-S18-AY
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP82N055NUG-S18-AY - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP82N055NUG-S18-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP82N055NUG-S18-AY
MOSFET N-CH 55V 82A TO262

MOSFET N-CH 55V 82A TO262

Supplier's Site

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1082629-NP82N055NUG-S18-AY NP82N055NUG-S18-AY
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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