California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NESG270034-T1 NESG270034-T1

Description
Manufacturer: CEL Win Source Part Number: 252185-NESG270034-T1 Packaging: Cut Reel Mounting: SMD (SMT) Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-PowerMiniMold Maximum Current Collector: 750mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9.2V Typical Gain (hFE) (Min): 80 @ 100mA, 3V Maximum Power Dissipation: 1.9W Alternative Parts (Cross-Reference): NESG260234-T1-AZ; NESG270034-T1-AZ; NESG260234-T1; NESG270034; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 252185-NESG270034-T1 Packaging: Cut Reel Mounting: SMD (SMT) Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-PowerMiniMold Maximum Current Collector: 750mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9.2V Typical Gain (hFE) (Min): 80 @ 100mA, 3V Maximum Power Dissipation: 1.9W Alternative Parts (Cross-Reference): NESG260234-T1-AZ; NESG270034-T1-AZ; NESG260234-T1; NESG270034; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - NESG270034-T1 - 252185-NESG270034-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NESG270034-T1
252185-NESG270034-T1
TRANSISTORS - RF Transistors (BJT) - NESG270034-T1 252185-NESG270034-T1
Manufacturer: CEL Win Source Part Number: 252185-NESG270034-T1 Packaging: Cut Reel Mounting: SMD (SMT) Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-PowerMiniMold Maximum Current Collector: 750mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9.2V Typical Gain (hFE) (Min): 80 @ 100mA, 3V Maximum Power Dissipation: 1.9W Alternative Parts (Cross-Reference): NESG260234-T1-AZ; NESG270034-T1-AZ; NESG260234-T1; NESG270034; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 252185-NESG270034-T1
Packaging: Cut Reel
Mounting: SMD (SMT)
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-PowerMiniMold
Maximum Current Collector: 750mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 9.2V
Typical Gain (hFE) (Min): 80 @ 100mA, 3V
Maximum Power Dissipation: 1.9W
Alternative Parts (Cross-Reference): NESG260234-T1-AZ; NESG270034-T1-AZ; NESG260234-T1; NESG270034;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
25V Bipolar Transistor
283-NESG270034-T1
25V Bipolar Transistor 283-NESG270034-T1
TRANSISTOR NPN 25V 3-MINI Product overview: NESG270034-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NESG270034-T1 can be used for catalog matching and distributor lookup.

TRANSISTOR NPN 25V 3-MINI Product overview: NESG270034-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NESG270034-T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category RF Transistors Bipolar RF Transistors
Product Number 252185-NESG270034-T1 283-NESG270034-T1
Product Name TRANSISTORS - RF Transistors (BJT) - NESG270034-T1 25V Bipolar Transistor
Polarity NPN; NPN NPN
Package Type SOT3; 3-PowerMiniMold Cut Reel
Packing Method Tape Reel; Cut Reel Cut Reel
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