California Eastern Laboratories - CEL 25V Bipolar Transistor NESG270034-T1

Description
TRANSISTOR NPN 25V 3-MINI Product overview: NESG270034-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NESG270034-T1 can be used for catalog matching and distributor lookup.
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Description
TRANSISTOR NPN 25V 3-MINI Product overview: NESG270034-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NESG270034-T1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
25V Bipolar Transistor
283-NESG270034-T1
25V Bipolar Transistor 283-NESG270034-T1
TRANSISTOR NPN 25V 3-MINI Product overview: NESG270034-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NESG270034-T1 can be used for catalog matching and distributor lookup.

TRANSISTOR NPN 25V 3-MINI Product overview: NESG270034-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NESG270034-T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - NESG270034-T1 - 252185-NESG270034-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NESG270034-T1
252185-NESG270034-T1
TRANSISTORS - RF Transistors (BJT) - NESG270034-T1 252185-NESG270034-T1
Manufacturer: CEL Win Source Part Number: 252185-NESG270034-T1 Packaging: Cut Reel Mounting: SMD (SMT) Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-PowerMiniMold Maximum Current Collector: 750mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9.2V Typical Gain (hFE) (Min): 80 @ 100mA, 3V Maximum Power Dissipation: 1.9W Alternative Parts (Cross-Reference): NESG260234-T1-AZ; NESG270034-T1-AZ; NESG260234-T1; NESG270034; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 252185-NESG270034-T1
Packaging: Cut Reel
Mounting: SMD (SMT)
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-PowerMiniMold
Maximum Current Collector: 750mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 9.2V
Typical Gain (hFE) (Min): 80 @ 100mA, 3V
Maximum Power Dissipation: 1.9W
Alternative Parts (Cross-Reference): NESG260234-T1-AZ; NESG270034-T1-AZ; NESG260234-T1; NESG270034;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-NESG270034-T1 252185-NESG270034-T1
Product Name 25V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - NESG270034-T1
Polarity NPN NPN; NPN
Package Type Cut Reel SOT3; 3-PowerMiniMold
Packing Method Cut Reel Tape Reel; Cut Reel
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