California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NESG270034-T1-AZ NESG270034-T1-AZ

Manufacturer: CEL
Win Source Part Number: 109180-NESG270034-T1-AZ
Packaging: Cut Reel
Mounting: SMD (SMT)
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-PowerMiniMold
Maximum Current Collector: 750mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 9.2V
Typical Gain (hFE) (Min): 80 @ 100mA, 3V
Maximum Power Dissipation: 1.9W
Alternative Parts (Cross-Reference): NESG260234-T1-AZ; NESG260234-T1; NESG270034;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

NPN SILICON MEDIUM POWER TRANSIS Product overview: NESG270034-T1-AZ from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NESG270034-T1-AZ can be used for catalog matching and distributor lookup.