California Eastern Laboratories - CEL Bipolar RF Transistors NESG2101M05-A

NPN silicon germanium RF transistor designed for medium output power amplification, packaged in a flat-lead 4-pin thin-type super minimold (M05) with dimensions of 2.05 mm by 1.25 mm. It has a collector-to-emitter voltage rating of 5.0 V, a maximum collector current of 100 mA, and a total power dissipation of 500 mW when mounted on a 38 cm² polyimide PCB. The device offers a gain bandwidth product of 17 GHz typical, a maximum stable power gain of 17.0 dB at 2 GHz, and a noise figure of 0.6 dB typical at 1 GHz with 7 mA collector current. It meets the AEC-Q200 qualification standard for automotive applications.