California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE97733-T1B-A NE97733-T1B-A

Description
Manufacturer: CEL Win Source Part Number: 1082940-NE97733-T1B- A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 8.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 20mA, 8V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
  • TRANSISTORS - RF Transistors (BJT) - NE97733-T1B-A - 1082940-NE97733-T1B-A - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - NE97733-T1B-A - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: CEL Win Source Part Number: 1082940-NE97733-T1B- A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 8.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 20mA, 8V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Suppliers

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Product
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TRANSISTORS - RF Transistors (BJT) - NE97733-T1B-A - 1082940-NE97733-T1B-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE97733-T1B-A
1082940-NE97733-T1B-A
TRANSISTORS - RF Transistors (BJT) - NE97733-T1B-A 1082940-NE97733-T1B-A
Manufacturer: CEL Win Source Part Number: 1082940-NE97733-T1B- A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 8.5GHz Transistor Polarity: PNP Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 20 @ 20mA, 8V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082940-NE97733-T1B-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB
Frequency - Transition: 8.5GHz
Transistor Polarity: PNP
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 20 @ 20mA, 8V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE97733-T1B-A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE97733-T1B-A
Bipolar RF Transistors NE97733-T1B-A
RF TRANS PNP 12V 8.5GHZ SOT23

RF TRANS PNP 12V 8.5GHZ SOT23

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category RF Transistors Bipolar RF Transistors
Product Number 1082940-NE97733-T1B-A NE97733-T1B-A
Product Name TRANSISTORS - RF Transistors (BJT) - NE97733-T1B-A Bipolar RF Transistors
Polarity PNP; PNP PNP; PNP
Package Type SOT3; SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F) 150 C (302 F)
Power Gain 20 dB 12 dB
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