California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE85634-T1 NE85634-T1

Description
Manufacturer: CEL Win Source Part Number: 1082937-NE85634-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 6.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 50 @ 20mA, 10V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 1082937-NE85634-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 6.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 50 @ 20mA, 10V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - NE85634-T1 - 1082937-NE85634-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE85634-T1
1082937-NE85634-T1
TRANSISTORS - RF Transistors (BJT) - NE85634-T1 1082937-NE85634-T1
Manufacturer: CEL Win Source Part Number: 1082937-NE85634-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 6.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 50 @ 20mA, 10V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082937-NE85634-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 6.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 50 @ 20mA, 10V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE85634-T1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE85634-T1
Bipolar RF Transistors NE85634-T1
RF TRANS NPN 12V 6.5GHZ SOT89

RF TRANS NPN 12V 6.5GHZ SOT89

Supplier's Site Datasheet
Singapore
12V 6.5GHZ SOT89 Bipolar Transistor
283-NE85634-T1
12V 6.5GHZ SOT89 Bipolar Transistor 283-NE85634-T1
RF TRANS NPN 12V 6.5GHZ SOT89 Product overview: NE85634-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6.5GHZ, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 6.5GHZ, SOT89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE85634-T1 can be used for catalog matching and distributor lookup.

RF TRANS NPN 12V 6.5GHZ SOT89 Product overview: NE85634-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6.5GHZ, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 6.5GHZ, SOT89, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE85634-T1 can be used for catalog matching and distributor lookup.

Supplier's Site
RF TRANS NPN 12V 6.5GHZ SOT89 - 130-NE85634-T1 - Utmel Electronic Limited
Hong Kong, China
RF TRANS NPN 12V 6.5GHZ SOT89
130-NE85634-T1
RF TRANS NPN 12V 6.5GHZ SOT89 130-NE85634-T1
RF TRANS NPN 12V 6.5GHZ SOT89

RF TRANS NPN 12V 6.5GHZ SOT89

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors
Product Number 1082937-NE85634-T1 NE85634-T1 283-NE85634-T1 130-NE85634-T1
Product Name TRANSISTORS - RF Transistors (BJT) - NE85634-T1 Bipolar RF Transistors 12V 6.5GHZ SOT89 Bipolar Transistor RF TRANS NPN 12V 6.5GHZ SOT89
Polarity NPN; NPN NPN; NPN NPN; NPN
Package Type SOT3; SOT89; SOT-89 SOT89; TO-243AA Tape & Reel (TR)
IC(max) 100 milliamps
VCEO 12 volts 12 volts
Noise Figure 1.4 dB 1.4 dB 1.4 dB
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