California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE85633-T1B NE85633-T1B

Manufacturer: CEL
Win Source Part Number: 1082936-NE85633-T1B
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.4dB to 2dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 50 @ 20mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23-3

RF TRANS NPN 12V 7GHZ SOT23 Product overview: NE85633-T1B from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7GHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 7GHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE85633-T1B can be used for catalog matching and distributor lookup.