California Eastern Laboratories - CEL Bipolar RF Transistors NE85633-T1B-A

NPN silicon RF transistor for microwave low-noise amplification in a 3-pin Minimold package, designed for surface mount applications. It has a collector-to-emitter voltage rating of 12 V, a maximum collector current of 100 mA, and a total power dissipation of 200 mW. The device provides a typical noise figure of 1.1 dB and a power gain of 11 dB at 1 GHz with VCE = 10 V and IC = 7 mA. The gain-bandwidth product is 7 GHz. It is supplied in 3 kpcs/reel on 8 mm wide embossed tape with the collector face oriented toward the perforation side.