California Eastern Laboratories - CEL Bipolar RF Transistors NE85633-A

NPN silicon RF transistor for microwave low-noise amplification in a 3-pin Minimold package measuring 2.8 mm × 2.0 mm × 1.1 mm. It has a collector-to-emitter voltage rating of 12 V, a collector current of 100 mA, and a total power dissipation of 200 mW. Typical noise figure is 1.1 dB at 1 GHz with a gain of 11 dB. The gain-bandwidth product is 7 GHz. It meets RoHS compliance and is sensitive to electrostatic discharge.