California Eastern Laboratories - CEL Bipolar RF Transistors NE85630-T1

Description
RF TRANS NPN 12V 4.5GHZ SOT323
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Description
RF TRANS NPN 12V 4.5GHZ SOT323
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - NE85630-T1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE85630-T1
Bipolar RF Transistors NE85630-T1
RF TRANS NPN 12V 4.5GHZ SOT323

RF TRANS NPN 12V 4.5GHZ SOT323

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - NE85630-T1 - 1082935-NE85630-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE85630-T1
1082935-NE85630-T1
TRANSISTORS - RF Transistors (BJT) - NE85630-T1 1082935-NE85630-T1
Manufacturer: CEL Win Source Part Number: 1082935-NE85630-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 6dB to 12dB Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2.2dB @ 1GHz to 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 40 @ 7mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082935-NE85630-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 6dB to 12dB
Frequency - Transition: 4.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.3dB to 2.2dB @ 1GHz to 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-323
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 40 @ 7mA, 3V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ODG (Origin Data Global) Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number NE85630-T1 1082935-NE85630-T1
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - NE85630-T1
Polarity NPN; NPN NPN; NPN
Package Type SOT323; SC-70, SOT-323 SOT3; SOT323; SOT-323
IC(max) 100 milliamps
VCEO 12 volts
Power Gain 6 dB
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