California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE85630-T1 NE85630-T1

Description
Manufacturer: CEL Win Source Part Number: 1082935-NE85630-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 6dB to 12dB Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2.2dB @ 1GHz to 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 40 @ 7mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
  • TRANSISTORS - RF Transistors (BJT) - NE85630-T1 - 1082935-NE85630-T1 - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - NE85630-T1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: CEL Win Source Part Number: 1082935-NE85630-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 6dB to 12dB Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2.2dB @ 1GHz to 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 40 @ 7mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Suppliers

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Product
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Supplier Links
TRANSISTORS - RF Transistors (BJT) - NE85630-T1 - 1082935-NE85630-T1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE85630-T1
1082935-NE85630-T1
TRANSISTORS - RF Transistors (BJT) - NE85630-T1 1082935-NE85630-T1
Manufacturer: CEL Win Source Part Number: 1082935-NE85630-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 6dB to 12dB Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2.2dB @ 1GHz to 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 40 @ 7mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082935-NE85630-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 6dB to 12dB
Frequency - Transition: 4.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.3dB to 2.2dB @ 1GHz to 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-323
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 40 @ 7mA, 3V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE85630-T1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE85630-T1
Bipolar RF Transistors NE85630-T1
RF TRANS NPN 12V 4.5GHZ SOT323

RF TRANS NPN 12V 4.5GHZ SOT323

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors
Product Number 1082935-NE85630-T1 NE85630-T1
Product Name TRANSISTORS - RF Transistors (BJT) - NE85630-T1 Bipolar RF Transistors
Polarity NPN; NPN NPN; NPN
Package Type SOT3; SOT323; SOT-323 SOT323; SC-70, SOT-323
IC(max) 100 milliamps
VCEO 12 volts
Power Gain 6 dB
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