NPN silicon RF transistor for high-frequency applications, available in SOT-323 package (33 pinout), with a gain bandwidth product of 7.0 GHz, noise figure of 1.4 dB at 1 GHz, and collector current rating of 100 mA. Maximum collector-emitter voltage is 12 V, collector-base voltage is 20 V, and junction temperature is rated to 150 °C. Total power dissipation is 600 mW with thermal resistance of 210 °C/W. Designed for low-noise amplification in RF circuits.
RF TRANS NPN 12V 4.5GHZ SOT323
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | NE85630-R25-A |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN; NPN |
| Package Type | SOT323; SC-70, SOT-323 |
| IC(max) | 100 milliamps |
| VCEO | 12 volts |
| Power Gain | 9 dB |
