California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE85619-T1-A NE85619-T1-A

Description
Manufacturer: CEL Win Source Part Number: 127409-NE85619-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Family Name: NE85619 Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 80 @ 7mA, 3V Maximum Power Dissipation: 100mW Alternative Parts (Cross-Reference): BFR182T; MPS3563; 2SC2570AE; PN5179_D27Z; Introduction Date: October 30, 1998 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
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Description
Manufacturer: CEL Win Source Part Number: 127409-NE85619-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Family Name: NE85619 Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 80 @ 7mA, 3V Maximum Power Dissipation: 100mW Alternative Parts (Cross-Reference): BFR182T; MPS3563; 2SC2570AE; PN5179_D27Z; Introduction Date: October 30, 1998 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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TRANSISTORS - RF Transistors (BJT) - NE85619-T1-A - 127409-NE85619-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE85619-T1-A
127409-NE85619-T1-A
TRANSISTORS - RF Transistors (BJT) - NE85619-T1-A 127409-NE85619-T1-A
Manufacturer: CEL Win Source Part Number: 127409-NE85619-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Family Name: NE85619 Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 80 @ 7mA, 3V Maximum Power Dissipation: 100mW Alternative Parts (Cross-Reference): BFR182T; MPS3563; 2SC2570AE; PN5179_D27Z; Introduction Date: October 30, 1998 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: CEL
Win Source Part Number: 127409-NE85619-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 4.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Family Name: NE85619
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-523
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 80 @ 7mA, 3V
Maximum Power Dissipation: 100mW
Alternative Parts (Cross-Reference): BFR182T; MPS3563; 2SC2570AE; PN5179_D27Z;
Introduction Date: October 30, 1998
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 127409-NE85619-T1-A
Product Name TRANSISTORS - RF Transistors (BJT) - NE85619-T1-A
Polarity NPN; NPN
Package Type SOT3; SOT-523
Packing Method Tape Reel; Reel - TR
IC(max) 100 milliamps
VCEO 12 volts
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