California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE85619-T1-A NE85619-T1-A

Manufacturer: CEL
Win Source Part Number: 127409-NE85619-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 4.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Family Name: NE85619
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-523
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 80 @ 7mA, 3V
Maximum Power Dissipation: 100mW
Alternative Parts (Cross-Reference): BFR182T; MPS3563; 2SC2570AE; PN5179_D27Z;
Introduction Date: October 30, 1998
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

SAME AS 2SC5006 NPN SILICON AMPL Product overview: NE85619-T1-A from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE85619-T1-A can be used for catalog matching and distributor lookup.