California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE68830-T1-A NE68830-T1-A

Description
Manufacturer: CEL Win Source Part Number: 1082929-NE68830-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.7dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 80 @ 3mA, 1V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 1082929-NE68830-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.7dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 80 @ 3mA, 1V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
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TRANSISTORS - RF Transistors (BJT) - NE68830-T1-A - 1082929-NE68830-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE68830-T1-A
1082929-NE68830-T1-A
TRANSISTORS - RF Transistors (BJT) - NE68830-T1-A 1082929-NE68830-T1-A
Manufacturer: CEL Win Source Part Number: 1082929-NE68830-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 4.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.7dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 80 @ 3mA, 1V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082929-NE68830-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 4.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.7dB to 2.5dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-323
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
Typical Gain (hFE) (Min): 80 @ 3mA, 1V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE68830-T1-A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE68830-T1-A-ND
Bipolar RF Transistors NE68830-T1-A-ND
RF Transistor NPN 6V 100mA 4.5GHz 150mW Surface Mount SOT-323

RF Transistor NPN 6V 100mA 4.5GHz 150mW Surface Mount SOT-323

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Technical Specifications

  Win Source Electronics DigiKey
Product Category Transistors Transistors
Product Number 1082929-NE68830-T1-A NE68830-T1-A-ND
Product Name TRANSISTORS - RF Transistors (BJT) - NE68830-T1-A Bipolar RF Transistors
Polarity NPN; NPN NPN
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