California Eastern Laboratories - CEL Bipolar RF Transistors NE68830-A

The NE68830 is an NPN silicon RF transistor designed for high-frequency applications, featuring a maximum collector current of 100 mA and a collector-emitter voltage rating of 6 V. It operates with low noise, reporting a minimum noise figure of 1.5 dB at 2.0 GHz and a gain-bandwidth product of 4.5 GHz. The device is packaged in the SOT-143 (3-pin ultra mini mold) surface mount style with dimensions of 2.9 mm width, 1.9 mm length, and 1.0 mm height. It dissipates up to 200 mW total power, with a junction-to-ambient thermal resistance of 625 °C/W. The part is qualified for operation at junction temperatures up to 150 °C and is compliant with RoHS standards as indicated by its -A suffix, which denotes Pb-free terminals.