California Eastern Laboratories - CEL Bipolar RF Transistors NE68819-A

The NE68819 is an NPN silicon RF transistor in the 3-SuperMiniMold (19) surface mount package, designed for low-noise high-frequency applications. It operates with a maximum collector current of 100 mA and a collector-to-emitter voltage of 6 V. The transistor achieves a minimum gain bandwidth product of 4.5 GHz and a minimum noise figure of 1.5 dB at 2.0 GHz with VCE = 3 V and IC = 20 mA. Maximum power dissipation is 125 mW, with a thermal resistance from junction to ambient of 1000 °C/W. The device is rated for a maximum junction temperature of 150 °C and meets EIA standards. The part number NE68819-A indicates a Pb-free lead finish, consistent with RoHS compliance, but the base part NE68819 is the subject of all electrical specifications.