California Eastern Laboratories - CEL Bipolar RF Transistors NE687M33-T3-A

The NE687M33-T3-A is an NPN silicon RF transistor in a 3-pin super lead-less minimold (M33) package, designed for low-noise amplification in radio frequency applications. It has a collector-to-emitter voltage rating of 3.0 V, a maximum collector current of 30 mA, and a total power dissipation of 90 mW when mounted on a 1.08 cm² × 1.0 mm glass epoxy PCB. The device features a typical noise figure of 1.5 dB at 2 GHz and a gain-bandwidth product of 12 GHz. It meets RoHS compliance with Pb-free terminals. The M33 package has dimensions of 4.0 mm × 1.1 mm, with pin 2 (base) oriented toward the perforation side of the tape for automated handling. Junction and storage temperatures range from −65 °C to +150 °C. This part is not intended for life support applications.