California Eastern Laboratories - CEL Bipolar RF Transistors NE687M03-A

The NE687M03-A is an NPN silicon RF transistor in the M03 surface-mount package, measuring 1.2 mm × 0.8 mm with a height of 0.59 mm, designed for low-noise, high-gain applications in portable wireless communications. It achieves a gain-bandwidth product of 14 GHz at VCE = 2 V and IC = 20 mA, and a noise figure of 1.4 dB at 2 GHz. The device is rated for a maximum collector-emitter voltage of 3 V, collector current of 30 mA, and total power dissipation of 90 mW. It meets RoHS standards with Pb-free terminals.