California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE685M33-T3-A NE685M33-T3-A

Description
Manufacturer: CEL Win Source Part Number: 1082925-NE685M33-T3- A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
  • TRANSISTORS - RF Transistors (BJT) - NE685M33-T3-A - 1082925-NE685M33-T3-A - Win Source Electronics
    Win Source Electronics
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Description
Manufacturer: CEL Win Source Part Number: 1082925-NE685M33-T3- A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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TRANSISTORS - RF Transistors (BJT) - NE685M33-T3-A - 1082925-NE685M33-T3-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE685M33-T3-A
1082925-NE685M33-T3-A
TRANSISTORS - RF Transistors (BJT) - NE685M33-T3-A 1082925-NE685M33-T3-A
Manufacturer: CEL Win Source Part Number: 1082925-NE685M33-T3- A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082925-NE685M33-T3-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 12GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-SuperMiniMold (M33)
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
Typical Gain (hFE) (Min): 75 @ 10mA, 3V
Maximum Power Dissipation: 130mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1082925-NE685M33-T3-A
Product Name TRANSISTORS - RF Transistors (BJT) - NE685M33-T3-A
Polarity NPN; NPN
Package Type SOT3; 3-SuperMiniMold (M33)
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
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