California Eastern Laboratories - CEL Bipolar RF Transistors NE685M33-A

The NE685M33-A is an NPN silicon RF transistor designed for low-noise amplification in high-frequency applications, housed in a 3-pin super lead-less minimold (M33) package measuring 1.1 mm × 0.64 mm with a 0.4 mm pitch. It operates with a maximum collector-to-emitter voltage of 6.0 V and a collector current of 30 mA, dissipating up to 130 mW when mounted on a 1.08 cm² glass epoxy PCB. The transistor exhibits a typical noise figure of 1.5 dB at 2 GHz and a gain bandwidth product of 12 GHz. It meets RoHS directives for restricted substances and is not intended for use in life support applications.