California Eastern Laboratories - CEL Bipolar RF Transistors NE685M03-A

The NE685M03-A is an NPN silicon RF transistor in the M03 package, designed for low-noise, high-gain applications in portable wireless communications. The package measures 1.2 mm × 0.8 mm with a height of 0.59 mm, featuring a flat lead style for improved RF performance. It has a gain bandwidth product of 12 GHz at VCE = 3 V and IC = 10 mA, and a noise figure of 1.5 dB at VCE = 3 V, IC = 3 mA, and f = 2 GHz. The device operates with a collector-emitter voltage of up to 5 V, collector current of up to 30 mA, and total power dissipation of 125 mW. The junction temperature rating is 150°C. The part is Pb-free, as indicated by the -A suffix, and meets RoHS requirements.