California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE68530-T1-A NE68530-T1-A

Description
Manufacturer: CEL Win Source Part Number: 1082923-NE68530-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 1082923-NE68530-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - NE68530-T1-A - 1082923-NE68530-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE68530-T1-A
1082923-NE68530-T1-A
TRANSISTORS - RF Transistors (BJT) - NE68530-T1-A 1082923-NE68530-T1-A
Manufacturer: CEL Win Source Part Number: 1082923-NE68530-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 10mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082923-NE68530-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 7dB
Frequency - Transition: 12GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.5dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-323
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
Typical Gain (hFE) (Min): 75 @ 10mA, 3V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE68530-ATR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE68530-ATR-ND
Bipolar RF Transistors NE68530-ATR-ND
RF Transistor NPN 6V 30mA 12GHz 150mW Surface Mount SOT-323

RF Transistor NPN 6V 30mA 12GHz 150mW Surface Mount SOT-323

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Technical Specifications

  Win Source Electronics DigiKey
Product Category RF Transistors Transistors
Product Number 1082923-NE68530-T1-A NE68530-ATR-ND
Product Name TRANSISTORS - RF Transistors (BJT) - NE68530-T1-A Bipolar RF Transistors
Polarity NPN; NPN NPN
Package Type SOT3; SOT323; SOT-323 SOT323; SC-70, SOT-323
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
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