California Eastern Laboratories - CEL Bipolar RF Transistors NE68530-A

The NE68530 is a silicon NPN bipolar RF transistor designed for low voltage, low current, and low noise applications. It is packaged in a SOT-323 case and operates with a maximum collector-to-emitter voltage of 6 V and a collector current of 30 mA. The device has a gain bandwidth product (fT) of 12 GHz and a minimum noise figure of 1.5 dB at 2.0 GHz, with an associated gain of 7.5 dB under the same conditions. It supports a maximum junction temperature of 150°C and has a total power dissipation of 150 mW. Thermal resistance from junction to ambient is 833 °C/W. The part is ESD sensitive and complies with EIAJ and RoHS standards, with Pb-free terminals. It is offered in tape and reel packaging.