California Eastern Laboratories - CEL Bipolar RF Transistors NE68518-A

The NE68518 is a silicon NPN bipolar RF transistor designed for low-voltage, low-current, and low-noise applications. It is packaged in an SOT-343 (mini-mold) surface-mount case measuring 2.0 mm × 1.3 mm × 0.9 mm. The device has a maximum collector-to-base voltage of 9 V, collector-to-emitter voltage of 6 V, and emitter-to-base voltage of 2.0 V. It operates with a collector current of up to 30 mA and a junction temperature up to 150°C. The gain bandwidth product is 12 GHz, with a minimum noise figure of 1.5 dB at 2.0 GHz. Thermal resistance from junction-to-ambient is 833 °C/W. The part is RoHS compliant with Pb-free terminals and meets EIAJ standards. It is not intended for life support applications.