California Eastern Laboratories - CEL Bipolar RF Transistors NE681M13-A

The NE681M13-A is an NPN silicon RF transistor in the M13 package, measuring 1.0 × 0.5 × 0.5 mm, designed for low-noise, high-gain amplifier applications in portable wireless systems. It has a gain bandwidth product of 7 GHz, a noise figure of 1.4 dB at 1 GHz, and a maximum collector current of 65 mA. The device is rated for a collector-to-emitter voltage of 10 V and a total power dissipation of 140 mW. It complies with RoHS requirements for restricted substances and features Pb-free terminals. The M13 package provides a low-profile, flat-lead design optimized for RF performance.