California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE681M03-T1-A NE681M03-T1-A

Description
Manufacturer: CEL Win Source Part Number: 1082921-NE681M03-T1- A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.4dB to 2.7dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: M03 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 80 @ 7mA, 3V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 1082921-NE681M03-T1- A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.4dB to 2.7dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: M03 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 80 @ 7mA, 3V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - NE681M03-T1-A - 1082921-NE681M03-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE681M03-T1-A
1082921-NE681M03-T1-A
TRANSISTORS - RF Transistors (BJT) - NE681M03-T1-A 1082921-NE681M03-T1-A
Manufacturer: CEL Win Source Part Number: 1082921-NE681M03-T1- A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.4dB to 2.7dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: M03 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 80 @ 7mA, 3V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082921-NE681M03-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.4dB to 2.7dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: M03
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 80 @ 7mA, 3V
Maximum Power Dissipation: 125mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE681M03-T1-A - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE681M03-T1-A
Bipolar RF Transistors NE681M03-T1-A
RF TRANS NPN 10V 7GHZ M03

RF TRANS NPN 10V 7GHZ M03

Supplier's Site Datasheet
10V 7GHZ Bipolar Transistor - 283-NE681M03-T1-A - ERSAELECTRONICS PTE. LTD.
Singapore
10V 7GHZ Bipolar Transistor
283-NE681M03-T1-A
10V 7GHZ Bipolar Transistor 283-NE681M03-T1-A
RF TRANS NPN 10V 7GHZ M03 Product overview: NE681M03-T1-A from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 7GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 7GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE681M03-T1-A can be used for catalog matching and distributor lookup.

RF TRANS NPN 10V 7GHZ M03 Product overview: NE681M03-T1-A from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 7GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 7GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE681M03-T1-A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD.
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1082921-NE681M03-T1-A NE681M03-T1-A 283-NE681M03-T1-A
Product Name TRANSISTORS - RF Transistors (BJT) - NE681M03-T1-A Bipolar RF Transistors 10V 7GHZ Bipolar Transistor
Polarity NPN; NPN NPN; NPN
Package Type SOT3; M03 SOT-623F Tape & Reel (TR)
Packing Method Tape Reel; Reel - TR Tape & Reel (TR)
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
Power Gain 80 dB
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