California Eastern Laboratories - CEL Bipolar RF Transistors NE681M03-A

Description
RF TRANS NPN 10V 7GHZ M03
Description
RF TRANS NPN 10V 7GHZ M03
Datasheet
Datasheet Summary
Powered by GS/AI

The NE681M03-A is an NPN silicon RF transistor in the M03 surface-mount package, measuring 1.2 mm × 0.8 mm with a height of 0.59 mm, designed for low-noise amplifier applications in portable wireless systems. It has a gain bandwidth product of 7 GHz and a noise figure of 1.4 dB at VCE = 3 V, IC = 7 mA, and f = 1 GHz. The device supports a maximum collector-emitter voltage of 10 V and a collector current of 65 mA, with a total power dissipation of 125 mW. It meets RoHS standards for restricted substances and is qualified under EIAJ1 as 2SC5433.

Datasheet Summary
Powered by GS/AI

The NE681M03-A is an NPN silicon RF transistor in the M03 surface-mount package, measuring 1.2 mm × 0.8 mm with a height of 0.59 mm, designed for low-noise amplifier applications in portable wireless systems. It has a gain bandwidth product of 7 GHz and a noise figure of 1.4 dB at VCE = 3 V, IC = 7 mA, and f = 1 GHz. The device supports a maximum collector-emitter voltage of 10 V and a collector current of 65 mA, with a total power dissipation of 125 mW. It meets RoHS standards for restricted substances and is qualified under EIAJ1 as 2SC5433.

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - NE681M03-A - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE681M03-A
Bipolar RF Transistors NE681M03-A
RF TRANS NPN 10V 7GHZ M03

RF TRANS NPN 10V 7GHZ M03

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number NE681M03-A
Product Name Bipolar RF Transistors
Polarity NPN; NPN
Package Type SOT-623F
IC(max) 65 milliamps
VCEO 10 volts
Unlock Full Specs
to access all available technical data