California Eastern Laboratories - CEL Bipolar RF Transistors NE68139-A

Description
RF Transistor NPN 10V 65mA 9GHz 200mW Surface Mount SOT-143
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Description
RF Transistor NPN 10V 65mA 9GHz 200mW Surface Mount SOT-143
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Datasheet
Datasheet Summary
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NPN silicon high-frequency transistor for RF amplification in the SOT-143 package, with a gain-bandwidth product of 9 GHz, a noise figure of 1.2 dB at 1 GHz and 1.6 dB at 2 GHz, and a maximum collector current of 65 mA. The device operates with a collector-emitter voltage of up to 10 V and dissipates up to 200 mW. It is rated for a junction temperature of 150°C and meets EIAJ Registered Number 2SC4094. The part is RoHS-compliant with Pb-free terminals.

Datasheet Summary
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NPN silicon high-frequency transistor for RF amplification in the SOT-143 package, with a gain-bandwidth product of 9 GHz, a noise figure of 1.2 dB at 1 GHz and 1.6 dB at 2 GHz, and a maximum collector current of 65 mA. The device operates with a collector-emitter voltage of up to 10 V and dissipates up to 200 mW. It is rated for a junction temperature of 150°C and meets EIAJ Registered Number 2SC4094. The part is RoHS-compliant with Pb-free terminals.

Suppliers

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Product
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Bipolar RF Transistors - NE68139-A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE68139-A-ND
Bipolar RF Transistors NE68139-A-ND
RF Transistor NPN 10V 65mA 9GHz 200mW Surface Mount SOT-143

RF Transistor NPN 10V 65mA 9GHz 200mW Surface Mount SOT-143

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number NE68139-A-ND
Product Name Bipolar RF Transistors
Polarity NPN
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