California Eastern Laboratories - CEL Bipolar RF Transistors NE68039R-T1-A

Description
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-143R
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Description
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-143R
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Datasheet
Datasheet Summary
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NPN silicon high-frequency transistor for RF applications, available in SOT-143R surface mount package. Features a gain bandwidth product of 10 GHz, noise figure of 2.6 dB at 4 GHz, and associated gain of 6.5 dB at 4 GHz. Maximum collector current is 35 mA, collector-emitter voltage is 10 V, and total power dissipation is 200 mW. Thermal resistance from junction to case is 200 °C/W. Meets EIAJ1 standard as 2SC4095. Operates with junction temperature up to 150 °C and storage temperature from -65 to +150 °C.

Datasheet Summary
Powered by GS/AI

NPN silicon high-frequency transistor for RF applications, available in SOT-143R surface mount package. Features a gain bandwidth product of 10 GHz, noise figure of 2.6 dB at 4 GHz, and associated gain of 6.5 dB at 4 GHz. Maximum collector current is 35 mA, collector-emitter voltage is 10 V, and total power dissipation is 200 mW. Thermal resistance from junction to case is 200 °C/W. Meets EIAJ1 standard as 2SC4095. Operates with junction temperature up to 150 °C and storage temperature from -65 to +150 °C.

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Bipolar RF Transistors - NE68039R-ATR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE68039R-ATR-ND
Bipolar RF Transistors NE68039R-ATR-ND
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-143R

RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-143R

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number NE68039R-ATR-ND
Product Name Bipolar RF Transistors
Polarity NPN
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