California Eastern Laboratories - CEL Bipolar RF Transistors NE68019-T1-A

Description
RF Transistor NPN 10V 35mA 10GHz 100mW Surface Mount SOT-523
Request a Quote Datasheet
Description
RF Transistor NPN 10V 35mA 10GHz 100mW Surface Mount SOT-523
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - NE68019-T1-ATR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE68019-T1-ATR-ND
Bipolar RF Transistors NE68019-T1-ATR-ND
RF Transistor NPN 10V 35mA 10GHz 100mW Surface Mount SOT-523

RF Transistor NPN 10V 35mA 10GHz 100mW Surface Mount SOT-523

Buy Now Datasheet
Bipolar RF Transistors - NE68019-T1-A - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE68019-T1-A
Bipolar RF Transistors NE68019-T1-A
RF TRANS NPN 10V 10GHZ SOT523

RF TRANS NPN 10V 10GHZ SOT523

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - NE68019-T1-A - 1082915-NE68019-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE68019-T1-A
1082915-NE68019-T1-A
TRANSISTORS - RF Transistors (BJT) - NE68019-T1-A 1082915-NE68019-T1-A
Manufacturer: CEL Win Source Part Number: 1082915-NE68019-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.6dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 80 @ 5mA, 3V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082915-NE68019-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9.6dB
Frequency - Transition: 10GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-523
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 80 @ 5mA, 3V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics
Product Category Transistors Bipolar RF Transistors RF Transistors
Product Number NE68019-T1-ATR-ND NE68019-T1-A 1082915-NE68019-T1-A
Product Name Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - NE68019-T1-A
Polarity NPN NPN; NPN NPN; NPN
Package Type SOT-523 SOT-523 SOT3; SOT-523
IC(max) 35 milliamps
VCEO 10 volts
Power Gain 9.6 dB 80 dB
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