California Eastern Laboratories - CEL Bipolar RF Transistors NE678M04-A

The NE678M04-A is a silicon NPN RF transistor in the SOT-343 package, with a height of 0.59 mm and flat leads for improved RF performance. It has a collector-emitter voltage rating of 6 V, a maximum collector current of 100 mA, and a power dissipation of 205 mW. The device exhibits a transition frequency of 12 GHz, a P-1dB output power of 18 dBm at 1.8 GHz, and a linear gain of 13 dB at 1.8 GHz. It is rated for junction temperatures up to 150°C and meets RoHS standards with Pb-free terminals. Thermal resistance from junction to ambient is 600°C/W when mounted on a 1.08 cm² × 1.0 mm glass epoxy PCB.