California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE67839-T1-A NE67839-T1-A

Description
Manufacturer: CEL Win Source Part Number: 1082914-NE67839-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-143 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 30mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
  • TRANSISTORS - RF Transistors (BJT) - NE67839-T1-A - 1082914-NE67839-T1-A - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - NE67839-T1-A - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: CEL Win Source Part Number: 1082914-NE67839-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-143 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 30mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - NE67839-T1-A - 1082914-NE67839-T1-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE67839-T1-A
1082914-NE67839-T1-A
TRANSISTORS - RF Transistors (BJT) - NE67839-T1-A 1082914-NE67839-T1-A
Manufacturer: CEL Win Source Part Number: 1082914-NE67839-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB Frequency - Transition: 12GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-143 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 6V Typical Gain (hFE) (Min): 75 @ 30mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082914-NE67839-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB
Frequency - Transition: 12GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-143
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
Typical Gain (hFE) (Min): 75 @ 30mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE67839-T1-A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE67839-T1-A
Bipolar RF Transistors NE67839-T1-A
RF TRANS NPN 6V 12GHZ SOT143

RF TRANS NPN 6V 12GHZ SOT143

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category RF Transistors Bipolar RF Transistors
Product Number 1082914-NE67839-T1-A NE67839-T1-A
Product Name TRANSISTORS - RF Transistors (BJT) - NE67839-T1-A Bipolar RF Transistors
Polarity NPN; NPN NPN; NPN
Package Type SOT3; SOT-143 SOT143; TO-253-4, TO-253AA
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F) 150 C (302 F)
Power Gain 75 dB 10 dB
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