California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE66219-A NE66219-A

Description
Manufacturer: CEL Win Source Part Number: 1082908-NE66219-A Packaging: Bulk Mounting: SMD (SMT) Gain: 14dB Frequency - Transition: 21GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V Typical Gain (hFE) (Min): 60 @ 5mA, 2V Maximum Power Dissipation: 115mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - RF Transistors (BJT) - NE66219-A - 1082908-NE66219-A - Win Source Electronics
    Win Source Electronics
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Description
Manufacturer: CEL Win Source Part Number: 1082908-NE66219-A Packaging: Bulk Mounting: SMD (SMT) Gain: 14dB Frequency - Transition: 21GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V Typical Gain (hFE) (Min): 60 @ 5mA, 2V Maximum Power Dissipation: 115mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - RF Transistors (BJT) - NE66219-A - 1082908-NE66219-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE66219-A
1082908-NE66219-A
TRANSISTORS - RF Transistors (BJT) - NE66219-A 1082908-NE66219-A
Manufacturer: CEL Win Source Part Number: 1082908-NE66219-A Packaging: Bulk Mounting: SMD (SMT) Gain: 14dB Frequency - Transition: 21GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-523 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V Typical Gain (hFE) (Min): 60 @ 5mA, 2V Maximum Power Dissipation: 115mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: CEL
Win Source Part Number: 1082908-NE66219-A
Packaging: Bulk
Mounting: SMD (SMT)
Gain: 14dB
Frequency - Transition: 21GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-523
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 3.3V
Typical Gain (hFE) (Min): 60 @ 5mA, 2V
Maximum Power Dissipation: 115mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1082908-NE66219-A
Product Name TRANSISTORS - RF Transistors (BJT) - NE66219-A
Polarity NPN; NPN
Package Type SOT3; SOT-523
Packing Method Bulk; Bulk
TJ 150 C (302 F)
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