The NE651R479A-A is a GaAs HJ-FET in a plastic surface mount package, designed for medium-power applications in mobile communications, Fixed Wireless Access, and PCS systems. It delivers 27 dBm typical output power at 1.9 GHz with 3.5 V drain bias and 12 dB linear gain. The device operates up to 3.7 GHz and features a thermal resistance of 30 °C/W. It is supplied in bulk packaging, compatible with standard reflow soldering up to 235 °C. The part meets RoHS requirements with Pb-free terminals.
RF Mosfet HFET 3.5V 50mA 1.9GHz 12dB 27dBm 79A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | NE651R479A-A-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 4-SMD, Flat Leads |
