California Eastern Laboratories - CEL Bipolar Transistor NE52418-T1

Description
IC AMP HBT GAAS LN 4-SMINI Product overview: NE52418-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE52418-T1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
IC AMP HBT GAAS LN 4-SMINI Product overview: NE52418-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE52418-T1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor 283-NE52418-T1
IC AMP HBT GAAS LN 4-SMINI Product overview: NE52418-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE52418-T1 can be used for catalog matching and distributor lookup.

IC AMP HBT GAAS LN 4-SMINI Product overview: NE52418-T1 from CEL (California Eastern Laboratories) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE52418-T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - NE52418-T1 - 251958-NE52418-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE52418-T1
251958-NE52418-T1
TRANSISTORS - RF Transistors (BJT) - NE52418-T1 251958-NE52418-T1
Manufacturer: CEL Win Source Part Number: 251958-NE52418-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB to 16dB Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB to 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package: 4-Super Mini Mold Maximum Current Collector: 40mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 100 @ 3mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: CEL
Win Source Part Number: 251958-NE52418-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 14dB to 16dB
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB to 1.5dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 125°C (TJ)
Case / Package: 4-Super Mini Mold
Maximum Current Collector: 40mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5V
Typical Gain (hFE) (Min): 100 @ 3mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 283-NE52418-T1 251958-NE52418-T1
Product Name Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - NE52418-T1
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; 4-Super Mini Mold
Packing Method Reel - TR
Unlock Full Specs
to access all available technical data