California Eastern Laboratories - CEL Bipolar RF Transistors NE46234-T1-SE-AZ

The NE46234 / 2SC4703 is an NPN epitaxial silicon RF transistor for low-distortion, low-noise amplification at low supply voltages, housed in a 3-pin SOT-89 surface mount package. It supports a maximum collector current of 150 mA, a collector-emitter voltage of 12 V, and a total power dissipation of 1.8 W when mounted on a 16 cm² ceramic substrate. The transistor offers a gain-bandwidth product of 6.0 GHz, an insertion power gain of 8.3 dB at 1 GHz, a noise figure of 2.3 dB, and intermodulation distortion figures of 55 dBc for IM2 and 76 dBc for IM3 at 50 mA and 5 V. The hFE is classified into grades, with the SE variant ranging from 125 to 250. The device meets thermally rated performance under pulse conditions with a maximum junction temperature of 150 °C.