California Eastern Laboratories - CEL Bipolar RF Transistors NE46234-AZ

The NE46234-AZ is an NPN epitaxial silicon RF transistor in a 3-pin power mini mold (SOT-89) package, designed for low-distortion, low-noise amplification at low supply voltages (VCE = 5 V). It has a maximum collector-to-emitter voltage of 12 V, a collector current rating of 150 mA, and a total power dissipation of 1.8 W when mounted on a specified ceramic substrate. The device exhibits a gain-bandwidth product of 6.0 GHz, a typical noise figure of 2.3 dB at 1 GHz, and intermodulation distortion performance of 55 dBc (IM2) and 76 dBc (IM3) under specified conditions. The collector-to-base capacitance is 1.5 to 2.5 pF. The transistor meets the absolute maximum ratings and electrical specifications defined for the NE46234 / 2SC4703 series.