California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE46134-T1 NE46134-T1

Description
Manufacturer: CEL Win Source Part Number: 1082884-NE46134-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2dB @ 500MHz to 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Maximum Current Collector: 250mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 40 @ 50mA, 10V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
  • TRANSISTORS - RF Transistors (BJT) - NE46134-T1 - 1082884-NE46134-T1 - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - NE46134-T1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: CEL Win Source Part Number: 1082884-NE46134-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2dB @ 500MHz to 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Maximum Current Collector: 250mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 40 @ 50mA, 10V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - NE46134-T1 - 1082884-NE46134-T1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE46134-T1
1082884-NE46134-T1
TRANSISTORS - RF Transistors (BJT) - NE46134-T1 1082884-NE46134-T1
Manufacturer: CEL Win Source Part Number: 1082884-NE46134-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2dB @ 500MHz to 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Maximum Current Collector: 250mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 40 @ 50mA, 10V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082884-NE46134-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2dB @ 500MHz to 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89
Maximum Current Collector: 250mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 40 @ 50mA, 10V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE46134-T1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
NE46134-T1
Bipolar RF Transistors NE46134-T1
RF TRANS NPN 15V 5.5GHZ SOT89

RF TRANS NPN 15V 5.5GHZ SOT89

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors
Product Number 1082884-NE46134-T1 NE46134-T1
Product Name TRANSISTORS - RF Transistors (BJT) - NE46134-T1 Bipolar RF Transistors
Polarity NPN; NPN NPN; NPN
Package Type SOT3; SOT89; SOT-89 SOT89; TO-243AA
IC(max) 250 milliamps
VCEO 15 volts
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