California Eastern Laboratories - CEL Bipolar RF Transistors NE46134-AZ

The NE46134 is an NPN silicon epitaxial bipolar transistor designed for medium-power microwave applications requiring high dynamic range and low intermodulation distortion. It is housed in a SOT-89 surface mount package with dimensions of 4.5 mm × 2.5 mm × 1.5 mm and a chip thickness of 160 µm. The device has a maximum collector-to-emitter voltage of 15 V, a collector current rating of 250 mA, and a maximum junction temperature of 150°C. It delivers 27.5 dBm output power at 1.0 GHz with a noise figure of 1.5 dB at 500 MHz, and an intermodulation distortion of -40 dBc at 20 dBm total output power. The gain bandwidth product is 5.5 GHz, and the thermal resistance from junction to case is 32.5 °C/W. The part meets EIAJ 2SC4536 registration and is not intended for life support applications.