RF Mosfet HFET 2V 10mA 20GHz 10dB S02
RF MOSFET GAAS HJ-FET 2V S02 Product overview: NE3514S02-T1C-A from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3514S02-T1C-A can be used for catalog matching and distributor lookup.
Manufacturer: CEL
Win Source Part Number: 806615-NE3514S02-T1C
Packaging: Reel
Voltage - Rated: 4V
Frequency: 20GHz
Current - Test: 10mA
Gain: 10dB
Transistor Type: HFET
Voltage - Test: 2V
Noise Figure: 0.75dB
Part Status: Obsolete (End Of Life)
Supplier Device Package: S02
Manufacturer Package: 4-SMD, Flat Leads
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Current Rating (Amps): 70mA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors |
| Product Number | NE3514S02-T1C-A-ND | 285-NE3514S02-T1C-A | 806615-NE3514S02-T1C-A | NE3514S02-T1C-A |
| Product Name | RF FETs, MOSFETs | 2V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NE3514S02-T1C-A | RF FETs, MOSFETs |
| Package Type | 4-SMD, Flat Leads | Tape & Reel (TR) | SOT3 | 4-SMD, Flat Leads |
| V(BR)DSS | 4 volts | |||
| Transconductance | 5.50E-5 kS | |||
| PD | 165 milliwatts | |||
| TJ | -65 C (-85 F) |