HETERO JUNCTION FIELD EFFECT TRANSISTOR Product overview: NE3512S02-T1D from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3512S02-T1D can be used for catalog matching and distributor lookup.
Manufacturer: CEL
Win Source Part Number: 333352-NE3512S02-T1D
Category: Discrete Semiconductor Products
Family: RFFETs
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 285-NE3512S02-T1D | 333352-NE3512S02-T1D |
| Product Name | MOSFET Transistor | Discrete Semiconductor Products |
| Package Type | SOT3 |
