California Eastern Laboratories - CEL Discrete Semiconductor Products NE3512S02-T1D

Description
Manufacturer: CEL Win Source Part Number: 333352-NE3512S02-T1D Category: Discrete Semiconductor Products Family: RFFETs Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 333352-NE3512S02-T1D Category: Discrete Semiconductor Products Family: RFFETs Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
Request a Quote

Suppliers

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Product
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Discrete Semiconductor Products - 333352-NE3512S02-T1D - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
333352-NE3512S02-T1D
Discrete Semiconductor Products 333352-NE3512S02-T1D
Manufacturer: CEL Win Source Part Number: 333352-NE3512S02-T1D Category: Discrete Semiconductor Products Family: RFFETs Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 333352-NE3512S02-T1D
Category: Discrete Semiconductor Products
Family: RFFETs
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

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MOSFET Transistor 285-NE3512S02-T1D
HETERO JUNCTION FIELD EFFECT TRANSISTOR Product overview: NE3512S02-T1D from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3512S02-T1D can be used for catalog matching and distributor lookup.

HETERO JUNCTION FIELD EFFECT TRANSISTOR Product overview: NE3512S02-T1D from CEL (California Eastern Laboratories) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3512S02-T1D can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 333352-NE3512S02-T1D 285-NE3512S02-T1D
Product Name Discrete Semiconductor Products MOSFET Transistor
Package Type SOT3
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