NE3512S02 is a GaAs HJ-FET for 12GHz applications with a noise figure of 0.35dB, gain of 13.5dB, and a micro-X plastic package. It operates at a drain voltage of 2.0V and drain current of 10mA.
RF Mosfet HFET 2V 10mA 12GHz 13.5dB S02
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | NE3512S02-A-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 4-SMD, Flat Leads |
