California Eastern Laboratories - CEL RF FETs, MOSFETs NE3511S02-A

The NE3511S02-A is a silicon gallium arsenide HJ-FET designed for low-noise amplification in X to Ku-band applications such as DBS LNBs. It is packaged in a Micro-X plastic S02 case measuring 5.0 mm × 3.2 mm × 1.7 mm with pins configured as source, drain, source, and gate. The device operates at a drain-to-source voltage of 1 to 3 V and a drain current of 5 to 20 mA, achieving a typical noise figure of 0.30 dB and associated gain of 13.5 dB at 12 GHz. It meets RoHS standards for lead-free terminals and is rated for a maximum channel temperature of 125 °C and total power dissipation of 165 mW when mounted on a 1.08 cm² glass epoxy PCB. It is sensitive to electrostatic discharge and contains gallium arsenide, requiring careful handling and disposal.